NE3509M04-T2-A
RF MOSFET GAAS HJ-FET 2V M04
part Number:
NE3509M04-T2-A
component:
NE3509M04-T2-A
manufacturer:
CEL (California Eastern Laboratories)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF FETs, MOSFETs >
describe:
RF MOSFET GAAS HJ-FET 2V M04
RoHS:
NO
NE3509M04-T2-A specifications
Voltage - Rated:
4 V
Voltage - Test:
2 V
Current - Test:
10 mA
Frequency:
2GHz
Technology:
GaAs HJ-FET
Gain:
17.5dB
Package / Case:
SOT-343F
Noise Figure:
0.4dB
Current Rating (Amps):
60mA
Power - Output:
11dBm
Supplier Device Package:
M04
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code