NE3512S02-A
RF MOSFET GAAS HJ-FET 2V S02
part Number：
NE3512S02-A
component：
NE3512S02-A
manufacturer：
CEL (California Eastern Laboratories)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
RF FETs, MOSFETs >
describe：
RF MOSFET GAAS HJ-FET 2V S02
RoHS：
NO
NE3512S02-A specifications
Voltage - Rated：
4 V
Package / Case：
4-SMD, Flat Leads
Frequency：
12GHz
Voltage - Test：
2 V
Current - Test：
10 mA
Technology：
GaAs HJ-FET
Gain：
13.5dB
Noise Figure：
0.35dB
Current Rating (Amps)：
70mA
Supplier Device Package：
S02
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