FII30-12E
IGBT H BRIDGE 1200V 33A I4PAK5
part Number：
FII30-12E
component：
FII30-12E
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
IGBT Arrays >
describe：
IGBT H BRIDGE 1200V 33A I4PAK5
RoHS：
NO
FII30-12E specifications
Mounting Type：
Through Hole
Power - Max：
150 W
Operating Temperature：
-55°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)：
1200 V
Input：
Standard
NTC Thermistor：
No
Package / Case：
i4-Pac™-5
Supplier Device Package：
ISOPLUS i4-PAC™
IGBT Type：
NPT
Configuration：
Half Bridge
Current - Collector Cutoff (Max)：
200 µA
Current - Collector (Ic) (Max)：
33 A
Vce(on) (Max) @ Vge, Ic：
2.9V @ 15V, 20A
Input Capacitance (Cies) @ Vce：
1.2 nF @ 25 V
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Standard Pack Quantity：1600
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