IXDN75N120
IGBT MOD 1200V 150A 660W SOT227B
part Number：
IXDN75N120
component：
IXDN75N120
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
IGBT Modules >
describe：
IGBT MOD 1200V 150A 660W SOT227B
RoHS：
YES
IXDN75N120 specifications
Mounting Type：
Chassis Mount
Operating Temperature：
-40°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)：
1200 V
Configuration：
Single
Input：
Standard
Package / Case：
SOT-227-4, miniBLOC
Supplier Device Package：
SOT-227B
NTC Thermistor：
No
IGBT Type：
NPT
Current - Collector Cutoff (Max)：
4 mA
Current - Collector (Ic) (Max)：
150 A
Input Capacitance (Cies) @ Vce：
5.5 nF @ 25 V
Power - Max：
660 W
Vce(on) (Max) @ Vge, Ic：
2.7V @ 15V, 75A
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2280
quantity
unit price
International prices
1
37.62
37.62
10
33.43
334.3
100
29.23
2923
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