APTM100H80FT1G

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APTM100H80FT1G

MOSFET 4N-CH 1000V 11A SP1

part Number：

APTM100H80FT1G

component：

APTM100H80FT1G

manufacturer：

Microsemi Corporation

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 4N-CH 1000V 11A SP1

RoHS：

：

APTM100H80FT1G APTM100H80FT1G APTM100H80FT1G APTM100H80FT1G APTM100H80FT1G

APTM100H80FT1G specifications

Mounting Type：

Chassis Mount

Operating Temperature：

-40°C ~ 150°C (TJ)

Technology：

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id：

5V @ 1mA

Configuration：

4 N-Channel (Full Bridge)

Gate Charge (Qg) (Max) @ Vgs：

150nC @ 10V

Package / Case：

SP1

Supplier Device Package：

SP1

Current - Continuous Drain (Id) @ 25°C：

11A

Drain to Source Voltage (Vdss)：

1000V (1kV)

Power - Max：

208W

Rds On (Max) @ Id, Vgs：

960mOhm @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds：

3876pF @ 25V

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Standard Pack Quantity：1600

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