APTM120A80FT1G

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APTM120A80FT1G

MOSFET 2N-CH 1200V 14A SP1

part Number：

APTM120A80FT1G

component：

APTM120A80FT1G

manufacturer：

Microsemi Corporation

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 1200V 14A SP1

RoHS：

：

APTM120A80FT1G APTM120A80FT1G APTM120A80FT1G APTM120A80FT1G APTM120A80FT1G

APTM120A80FT1G specifications

Mounting Type：

Chassis Mount

Operating Temperature：

-40°C ~ 150°C (TJ)

Technology：

MOSFET (Metal Oxide)

Configuration：

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)：

1200V (1.2kV)

Vgs(th) (Max) @ Id：

5V @ 2.5mA

Power - Max：

357W

Package / Case：

SP1

Supplier Device Package：

SP1

Current - Continuous Drain (Id) @ 25°C：

14A

Gate Charge (Qg) (Max) @ Vgs：

260nC @ 10V

Rds On (Max) @ Id, Vgs：

960mOhm @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds：

6696pF @ 25V

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Standard Pack Quantity：1600

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