APTM120TDU57PG

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APTM120TDU57PG

MOSFET 6N-CH 1200V 17A SP6-P

part Number：

APTM120TDU57PG

component：

APTM120TDU57PG

manufacturer：

Microsemi Corporation

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 6N-CH 1200V 17A SP6-P

RoHS：

：

APTM120TDU57PG APTM120TDU57PG APTM120TDU57PG APTM120TDU57PG APTM120TDU57PG

APTM120TDU57PG specifications

Mounting Type：

Chassis Mount

Operating Temperature：

-40°C ~ 150°C (TJ)

Technology：

MOSFET (Metal Oxide)

Package / Case：

SP6

Drain to Source Voltage (Vdss)：

1200V (1.2kV)

Vgs(th) (Max) @ Id：

5V @ 2.5mA

Configuration：

6 N-Channel (3-Phase Bridge)

Supplier Device Package：

SP6-P

Power - Max：

390W

Current - Continuous Drain (Id) @ 25°C：

17A

Rds On (Max) @ Id, Vgs：

684mOhm @ 8.5A, 10V

Gate Charge (Qg) (Max) @ Vgs：

187nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds：

5155pF @ 25V

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Standard Pack Quantity：1600

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