GT10J312(Q)
IGBT 600V 10A 60W TO220SM
part Number：
GT10J312(Q)
component：
GT10J312(Q)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 600V 10A 60W TO220SM
RoHS：
NO
GT10J312(Q) specifications
Mounting Type：
Through Hole
Power - Max：
60 W
Operating Temperature：
150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)：
600 V
Input Type：
Standard
Reverse Recovery Time (trr)：
200 ns
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Collector (Ic) (Max)：
10 A
Current - Collector Pulsed (Icm)：
20 A
Vce(on) (Max) @ Vge, Ic：
2.7V @ 15V, 10A
Td (on/off) @ 25°C：
400ns/400ns
Test Condition：
300V, 10A, 100Ohm, 15V
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Standard Pack Quantity：1600
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