GT60N321(Q)
IGBT 1000V 60A 170W TO3P LH
part Number：
GT60N321(Q)
component：
GT60N321(Q)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 1000V 60A 170W TO3P LH
RoHS：
NO
GT60N321(Q) specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
Input Type：
Standard
Reverse Recovery Time (trr)：
2.5 µs
Current - Collector (Ic) (Max)：
60 A
Current - Collector Pulsed (Icm)：
120 A
Voltage - Collector Emitter Breakdown (Max)：
1000 V
Power - Max：
170 W
Package / Case：
TO-3PL
Supplier Device Package：
TO-3P(LH)
Vce(on) (Max) @ Vge, Ic：
2.8V @ 15V, 60A
Td (on/off) @ 25°C：
330ns/700ns
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Standard Pack Quantity：1600
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