GT30J121(Q)
IGBT 600V 30A 170W TO3PN
part Number：
GT30J121(Q)
component：
GT30J121(Q)
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 600V 30A 170W TO3PN
RoHS：
YES
：
GT30J121(Q) specifications
Mounting Type：
Through Hole
Voltage - Collector Emitter Breakdown (Max)：
600 V
Package / Case：
TO-3P-3, SC-65-3
Input Type：
Standard
Current - Collector Pulsed (Icm)：
60 A
Current - Collector (Ic) (Max)：
30 A
Supplier Device Package：
TO-3P(N)
Power - Max：
170 W
Vce(on) (Max) @ Vge, Ic：
2.45V @ 15V, 30A
Td (on/off) @ 25°C：
90ns/300ns
Switching Energy：
1mJ (on), 800µJ (off)
Test Condition：
300V, 30A, 24Ohm, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1657
quantity
unit price
International prices
1
3.27
3.27
10
2.74
27.4
25
2.59
64.75
100
2.22
222
300
2.09
627
500
1.97
985
1000
1.69
1690
2400
1.59
3816
4900
1.53
7497
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