EPC2007
GANFET N-CH 100V 6A DIE OUTLINE
EPC2007 specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 125°C (TJ)
Package / Case：
Die
Supplier Device Package：
Die
FET Type：
N-Channel
Drain to Source Voltage (Vdss)：
100 V
Current - Continuous Drain (Id) @ 25°C：
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：
5V
Technology：
GaNFET (Gallium Nitride)
Vgs (Max)：
+6V, -5V
Gate Charge (Qg) (Max) @ Vgs：
2.8 nC @ 5 V
Rds On (Max) @ Id, Vgs：
30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id：
2.5V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds：
205 pF @ 50 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1000
0.93
930
2000
0.89
1780
5000
0.85
4250
10000
0.83
8300
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