EPC2010
GANFET N-CH 200V 12A DIE
part Number:
EPC2010
component:
EPC2010
manufacturer:
EPC
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
GANFET N-CH 200V 12A DIE
RoHS:
YES
EPC2010 specifications
Mounting Type:
Surface Mount
Operating Temperature:
-40°C ~ 125°C (TJ)
Package / Case:
Die
Supplier Device Package:
Die
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
+6V, -4V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Rds On (Max) @ Id, Vgs:
25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:
7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 100 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
unit price
International prices
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code