EPC2014
GANFET N-CH 40V 10A DIE OUTLINE
EPC2014 specifications
Mounting Type：
Surface Mount
Package / Case：
Die
Supplier Device Package：
Die
Operating Temperature：
-40°C ~ 150°C (TJ)
FET Type：
N-Channel
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
5V
Technology：
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C：
10A (Ta)
Vgs(th) (Max) @ Id：
2.5V @ 2mA
Vgs (Max)：
+6V, -5V
Gate Charge (Qg) (Max) @ Vgs：
2.8 nC @ 5 V
Rds On (Max) @ Id, Vgs：
16mOhm @ 5A, 5V
Input Capacitance (Ciss) (Max) @ Vds：
325 pF @ 20 V
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