EPC2015
GANFET N-CH 40V 33A DIE OUTLINE
EPC2015 specifications
Mounting Type：
Surface Mount
Package / Case：
Die
Supplier Device Package：
Die
Operating Temperature：
-40°C ~ 150°C (TJ)
FET Type：
N-Channel
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
5V
Technology：
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C：
33A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
11.6 nC @ 5 V
Vgs (Max)：
+6V, -5V
Vgs(th) (Max) @ Id：
2.5V @ 9mA
Input Capacitance (Ciss) (Max) @ Vds：
1200 pF @ 20 V
Rds On (Max) @ Id, Vgs：
4mOhm @ 33A, 5V
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