IPB180N04S4H0ATMA1
MOSFET N-CH 40V 180A TO263-7-3
part Number:
IPB180N04S4H0ATMA1
component:
IPB180N04S4H0ATMA1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 40V 180A TO263-7-3
RoHS:
YES
IPB180N04S4H0ATMA1 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id:
4V @ 180µA
Power Dissipation (Max):
250W (Tc)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Supplier Device Package:
PG-TO263-7-3
Rds On (Max) @ Id, Vgs:
1.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
17940 pF @ 25 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:3184
quantity
unit price
International prices
1000
2.17
2170
2000
2.04
4080
5000
1.96
9800
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code