SQ2361EES-T1-GE3
MOSFET P-CH 60V 2.5A SOT23-3
part Number:
SQ2361EES-T1-GE3
Alternative Model:
SQ2361ES-T1_GE3  ,  SQ2361AEES-T1_GE3  ,  CSTCR4M00G55B95-R0  ,  SI2319CDS-T1-GE3  ,  32208550  ,  SQ2362ES-T1_BE3  ,  MCP3551-E/SN
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 2.5A SOT23-3
RoHS:
YES
SQ2361EES-T1-GE3 specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Power Dissipation (Max):
2W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Rds On (Max) @ Id, Vgs:
150mOhm @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
545 pF @ 30 V
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Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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