2N7635-GA
TRANS SJT 650V 4A TO257
part Number：
2N7635-GA
component：
2N7635-GA
manufacturer：
GeneSiC Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
TRANS SJT 650V 4A TO257
RoHS：
NO
2N7635-GA specifications
Mounting Type：
Through Hole
Drain to Source Voltage (Vdss)：
650 V
Technology：
SiC (Silicon Carbide Junction Transistor)
Supplier Device Package：
TO-257
Package / Case：
TO-257-3
Power Dissipation (Max)：
47W (Tc)
Current - Continuous Drain (Id) @ 25°C：
4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs：
415mOhm @ 4A
Input Capacitance (Ciss) (Max) @ Vds：
324 pF @ 35 V
Operating Temperature：
-55°C ~ 225°C (TJ)
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