GA10JT12-263
TRANS SJT 1200V 25A
part Number:
GA10JT12-263
component:
GA10JT12-263
manufacturer:
GeneSiC Semiconductor
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
TRANS SJT 1200V 25A
RoHS:
YES
GA10JT12-263 specifications
Mounting Type:
Surface Mount
Operating Temperature:
175°C (TJ)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1403 pF @ 800 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 10A
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