SSM6L09FUTE85LF
MOSFET N/P-CH 30V 0.4A/0.2A US6
part Number:
SSM6L09FUTE85LF
component:
SSM6L09FUTE85LF
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET N/P-CH 30V 0.4A/0.2A US6
RoHS:
YES
SSM6L09FUTE85LF specifications
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Operating Temperature:
150°C (TJ)
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Power - Max:
300mW
Supplier Device Package:
US6
Vgs(th) (Max) @ Id:
1.8V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 5V
Current - Continuous Drain (Id) @ 25°C:
400mA, 200mA
Rds On (Max) @ Id, Vgs:
700mOhm @ 200MA, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:36643
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unit price
International prices
3000
0.1
300
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0.1
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9000
0.09
810
30000
0.09
2700
75000
0.07
5250
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