CSD85312Q3E

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CSD85312Q3E

MOSFET 2N-CH 20V 39A 8VSON

part Number：

CSD85312Q3E

component：

CSD85312Q3E

manufacturer：

Texas Instruments

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 20V 39A 8VSON

RoHS：

YES

：

CSD85312Q3E CSD85312Q3E

CSD85312Q3E specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

Operating Temperature：

-55°C ~ 150°C (TJ)

Package / Case：

8-PowerVDFN

Drain to Source Voltage (Vdss)：

20V

Configuration：

2 N-Channel (Dual) Common Source

Vgs(th) (Max) @ Id：

1.4V @ 250µA

Power - Max：

2.5W

FET Feature：

Logic Level Gate, 5V Drive

Supplier Device Package：

8-VSON (3.3x3.3)

Current - Continuous Drain (Id) @ 25°C：

39A

Rds On (Max) @ Id, Vgs：

12.4mOhm @ 10A, 8V

Gate Charge (Qg) (Max) @ Vgs：

15.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds：

2390pF @ 10V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：9403

quantity

unit price

International prices

2500

0.51

1275

5000

0.49

2450

12500

0.46

5750

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