TPN11006NL,LQ
MOSFET N-CH 60V 17A 8TSON
part Number：
TPN11006NL,LQ
component：
TPN11006NL,LQ
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 17A 8TSON
RoHS：
YES
TPN11006NL,LQ specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Package / Case：
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C：
17A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
23 nC @ 10 V
Supplier Device Package：
8-TSON Advance (3.1x3.1)
Input Capacitance (Ciss) (Max) @ Vds：
2000 pF @ 30 V
Power Dissipation (Max)：
700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id：
2.5V @ 200µA
Rds On (Max) @ Id, Vgs：
11.4mOhm @ 8.5A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：8423
quantity
unit price
International prices
3000
0.33
990
6000
0.31
1860
9000
0.3
2700
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