C2M0280120D
SICFET N-CH 1200V 10A TO247-3
part Number：
C2M0280120D
component：
C2M0280120D
manufacturer：
Wolfspeed
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1200V 10A TO247-3
RoHS：
YES
C2M0280120D specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247-3
Drain to Source Voltage (Vdss)：
1200 V
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Vgs (Max)：
+25V, -10V
Current - Continuous Drain (Id) @ 25°C：
10A (Tc)
Power Dissipation (Max)：
62.5W (Tc)
Rds On (Max) @ Id, Vgs：
370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id：
2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：
20.4 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
259 pF @ 1000 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：15950
quantity
unit price
International prices
1
10.96
10.96
30
8.75
262.5
120
7.83
939.6
510
6.91
3524.1
1020
6.22
6344.4
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