EPC8009
GANFET N-CH 65V 4A DIE
EPC8009 specifications
Mounting Type：
Surface Mount
Package / Case：
Die
Supplier Device Package：
Die
Operating Temperature：
-40°C ~ 150°C (TJ)
FET Type：
N-Channel
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)：
5V
Technology：
GaNFET (Gallium Nitride)
Vgs (Max)：
+6V, -4V
Current - Continuous Drain (Id) @ 25°C：
4A (Ta)
Drain to Source Voltage (Vdss)：
65 V
Gate Charge (Qg) (Max) @ Vgs：
0.45 nC @ 5 V
Rds On (Max) @ Id, Vgs：
130mOhm @ 500mA, 5V
Input Capacitance (Ciss) (Max) @ Vds：
52 pF @ 32.5 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：11393
quantity
unit price
International prices
2500
1.71
4275
5000
1.64
8200
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