RGTH60TS65GC11
IGBT TRNCH FIELD 650V 58A TO247N
part Number:
RGTH60TS65GC11
component:
RGTH60TS65GC11
manufacturer:
ROHM Semiconductor
category:
Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs >
describe:
IGBT TRNCH FIELD 650V 58A TO247N
RoHS:
YES
RGTH60TS65GC11 specifications
Mounting Type:
Through Hole
Operating Temperature:
-40°C ~ 175°C (TJ)
IGBT Type:
Trench Field Stop
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
650 V
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 30A
Supplier Device Package:
TO-247N
Current - Collector Pulsed (Icm):
120 A
Test Condition:
400V, 30A, 10Ohm, 15V
Current - Collector (Ic) (Max):
58 A
Gate Charge:
58 nC
Td (on/off) @ 25°C:
27ns/105ns
Power - Max:
197 W
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1609
quantity
unit price
International prices
1
3.55
3.55
30
2.81
84.3
120
2.41
289.2
510
2.14
1091.4
1020
1.83
1866.6
2010
1.73
3477.3
5010
1.66
8316.6
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