RGT16NS65DGTL
IGBT TRENCH FIELD 650V 16A LPDS
part Number：
RGT16NS65DGTL
component：
RGT16NS65DGTL
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRENCH FIELD 650V 16A LPDS
RoHS：
YES
RGT16NS65DGTL specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Input Type：
Standard
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max)：
650 V
Supplier Device Package：
LPDS
Gate Charge：
21 nC
Reverse Recovery Time (trr)：
42 ns
Current - Collector (Ic) (Max)：
16 A
Current - Collector Pulsed (Icm)：
24 A
Power - Max：
94 W
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 8A
Td (on/off) @ 25°C：
13ns/33ns
Test Condition：
400V, 8A, 10Ohm, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1865
quantity
unit price
International prices
1000
0.83
830
2000
0.79
1580
5000
0.76
3800
10000
0.73
7300
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