RGT8BM65DTL
IGBT TRENCH FIELD 650V 8A TO252
part Number：
RGT8BM65DTL
component：
RGT8BM65DTL
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRENCH FIELD 650V 8A TO252
RoHS：
YES
RGT8BM65DTL specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Input Type：
Standard
Supplier Device Package：
TO-252
Reverse Recovery Time (trr)：
40 ns
Current - Collector (Ic) (Max)：
8 A
Voltage - Collector Emitter Breakdown (Max)：
650 V
Current - Collector Pulsed (Icm)：
12 A
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 4A
Power - Max：
62 W
Gate Charge：
13.5 nC
Td (on/off) @ 25°C：
17ns/69ns
Test Condition：
400V, 4A, 50Ohm, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3840
quantity
unit price
International prices
2500
1
2500
5000
0.96
4800
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