RGT8NS65DGTL
IGBT TRENCH FIELD 650V 8A LPDS
part Number：
RGT8NS65DGTL
component：
RGT8NS65DGTL
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRENCH FIELD 650V 8A LPDS
RoHS：
YES
RGT8NS65DGTL specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Input Type：
Standard
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Reverse Recovery Time (trr)：
40 ns
Current - Collector (Ic) (Max)：
8 A
Voltage - Collector Emitter Breakdown (Max)：
650 V
Current - Collector Pulsed (Icm)：
12 A
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 4A
Supplier Device Package：
LPDS
Power - Max：
65 W
Gate Charge：
13.5 nC
Td (on/off) @ 25°C：
17ns/69ns
Test Condition：
400V, 4A, 50Ohm, 15V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1000
0.63
630
2000
0.59
1180
5000
0.56
2800
10000
0.54
5400
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