GPA030A135MN-FDR
IGBT 1350V 60A 329W TO3PN
part Number：
GPA030A135MN-FDR
component：
GPA030A135MN-FDR
manufacturer：
SemiQ
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT 1350V 60A 329W TO3PN
RoHS：
YES
GPA030A135MN-FDR specifications
Mounting Type：
Through Hole
Operating Temperature：
-55°C ~ 150°C (TJ)
IGBT Type：
Trench Field Stop
Package / Case：
TO-3P-3, SC-65-3
Input Type：
Standard
Current - Collector (Ic) (Max)：
60 A
Current - Collector Pulsed (Icm)：
90 A
Supplier Device Package：
TO-3PN
Vce(on) (Max) @ Vge, Ic：
2.4V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)：
1350 V
Reverse Recovery Time (trr)：
450 ns
Power - Max：
329 W
Td (on/off) @ 25°C：
30ns/145ns
Gate Charge：
300 nC
Test Condition：
600V, 30A, 5Ohm, 15V
Switching Energy：
4.4mJ (on), 1.18mJ (off)
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Standard Pack Quantity：1600
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