IXFA10N60P
MOSFET N-CH 600V 10A TO263
part Number:
IXFA10N60P
component:
IXFA10N60P
manufacturer:
Littelfuse / IXYS RF
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 600V 10A TO263
RoHS:
YES
IXFA10N60P specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs (Max):
±30V
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss):
600 V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
200W (Tc)
Supplier Device Package:
TO-263AA (IXFA)
Input Capacitance (Ciss) (Max) @ Vds:
1610 pF @ 25 V
Vgs(th) (Max) @ Id:
5.5V @ 1mA
Rds On (Max) @ Id, Vgs:
740mOhm @ 5A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1922
quantity
unit price
International prices
1
4.14
4.14
50
3.28
164
100
2.82
282
500
2.5
1250
1000
2.14
2140
2000
2.02
4040
5000
1.94
9700
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
corporate name:
Entercorporate name
Name:
EnterName
phone:
Enterphone
email:
Enteremail
quantity:
Enterquantity
describe:
Enterdescribe
Verification code:
Please enter the verification code