IXCP01N90E
MOSFET N-CH 900V 250MA TO220AB
part Number：
IXCP01N90E
component：
IXCP01N90E
manufacturer：
Littelfuse / IXYS RF
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 900V 250MA TO220AB
RoHS：
NO
IXCP01N90E specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Supplier Device Package：
TO-220-3
Drain to Source Voltage (Vdss)：
900 V
Rds On (Max) @ Id, Vgs：
80Ohm @ 50mA, 10V
Power Dissipation (Max)：
40W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
7.5 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
250mA (Tc)
Vgs(th) (Max) @ Id：
5V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds：
133 pF @ 25 V
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Standard Pack Quantity：1600
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