SI7818DN-T1-GE3
MOSFET N-CH 150V 2.2A PPAK1212-8
part Number：
SI7818DN-T1-GE3
component：
SI7818DN-T1-GE3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 150V 2.2A PPAK1212-8
RoHS：
YES
SI7818DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
1.5W (Ta)
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drain to Source Voltage (Vdss)：
150 V
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
2.2A (Ta)
Rds On (Max) @ Id, Vgs：
135mOhm @ 3.4A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：7294
quantity
unit price
International prices
3000
0.66
1980
6000
0.63
3780
9000
0.6
5400
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