EPC2001
GANFET N-CH 100V 25A DIE OUTLINE
EPC2001 specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 125°C (TJ)
Package / Case：
Die
Supplier Device Package：
Die
FET Type：
N-Channel
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
5V
Technology：
GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id：
2.5V @ 5mA
Current - Continuous Drain (Id) @ 25°C：
25A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
10 nC @ 5 V
Vgs (Max)：
+6V, -5V
Rds On (Max) @ Id, Vgs：
7mOhm @ 25A, 5V
Input Capacitance (Ciss) (Max) @ Vds：
950 pF @ 50 V
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Standard Pack Quantity：1600
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