FDA38N30
MOSFET N-CH 300V 38A TO3PN
FDA38N30 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
5V @ 250µA
Package / Case：
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss)：
300 V
Current - Continuous Drain (Id) @ 25°C：
38A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 10 V
Supplier Device Package：
TO-3PN
Input Capacitance (Ciss) (Max) @ Vds：
2600 pF @ 25 V
Power Dissipation (Max)：
312W (Tc)
Rds On (Max) @ Id, Vgs：
85mOhm @ 19A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：11736
quantity
unit price
International prices
1
3.06
3.06
30
2.42
72.6
120
2.08
249.6
510
1.85
943.5
1020
1.58
1611.6
2010
1.49
2994.9
5010
1.43
7164.3
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