TK100E10N1,S1X
MOSFET N-CH 100V 100A TO220
part Number:
TK100E10N1,S1X
component:
TK100E10N1,S1X
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 100A TO220
RoHS:
YES
TK100E10N1,S1X specifications
Mounting Type:
Through Hole
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
TO-220-3
Supplier Device Package:
TO-220
Vgs(th) (Max) @ Id:
4V @ 1mA
Power Dissipation (Max):
255W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
8800 pF @ 50 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:5960
quantity
unit price
International prices
1
3.83
3.83
50
3.03
151.5
100
2.6
260
500
2.31
1155
1000
1.98
1980
2000
1.86
3720
5000
1.79
8950
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