TK31V60X,LQ
MOSFET N-CH 600V 30.8A 4DFN
part Number：
TK31V60X,LQ
component：
TK31V60X,LQ
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 30.8A 4DFN
RoHS：
YES
TK31V60X,LQ specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
600 V
Gate Charge (Qg) (Max) @ Vgs：
65 nC @ 10 V
Power Dissipation (Max)：
240W (Tc)
Package / Case：
4-VSFN Exposed Pad
Supplier Device Package：
4-DFN-EP (8x8)
Input Capacitance (Ciss) (Max) @ Vds：
3000 pF @ 300 V
Current - Continuous Drain (Id) @ 25°C：
30.8A (Ta)
Rds On (Max) @ Id, Vgs：
98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id：
3.5V @ 1.5mA
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：25447
quantity
unit price
International prices
2500
2.42
6050
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