IRF630
MOSFET N-CH 200V 9A TO220AB
part Number:
IRF630
component:
IRF630
manufacturer:
STMicroelectronics
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 200V 9A TO220AB
RoHS:
YES
IRF630 specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drain to Source Voltage (Vdss):
200 V
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
Power Dissipation (Max):
75W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:15606
quantity
unit price
International prices
1
1.53
1.53
50
1.23
61.5
100
0.98
98
500
0.83
415
1000
0.67
670
2000
0.63
1260
5000
0.6
3000
10000
0.58
5800
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