STN1HNK60
MOSFET N-CH 600V 400MA SOT223
STN1HNK60 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Package / Case：
TO-261-4, TO-261AA
Supplier Device Package：
SOT-223
Drain to Source Voltage (Vdss)：
600 V
Gate Charge (Qg) (Max) @ Vgs：
10 nC @ 10 V
Rds On (Max) @ Id, Vgs：
8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C：
400mA (Tc)
Vgs(th) (Max) @ Id：
3.7V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds：
156 pF @ 25 V
Power Dissipation (Max)：
3.3W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：36131
quantity
unit price
International prices
4000
0.44
1760
8000
0.42
3360
12000
0.4
4800
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