IRF640PBF
MOSFET N-CH 200V 18A TO220AB
IRF640PBF specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
TO-220AB
Package / Case：
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds：
1300 pF @ 25 V
Vgs(th) (Max) @ Id：
4V @ 250µA
Power Dissipation (Max)：
125W (Tc)
Drain to Source Voltage (Vdss)：
200 V
Gate Charge (Qg) (Max) @ Vgs：
70 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
18A (Tc)
Rds On (Max) @ Id, Vgs：
180mOhm @ 11A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2118
quantity
unit price
International prices
1
1.91
1.91
50
1.54
77
100
1.27
127
1000
0.91
910
5000
0.83
4150
10000
0.8
8000
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